BF909WR ME 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
7V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
40mA |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.3-1/0.3-1.2V |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
N-channel dual gate MOS-FETs VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. FEATURES ? Specially designed for use at 5 V supply voltage ? High forward transfer admittance ? Short channel transistor with high forward transfer admittance to input capacitance ratio ? Low noise gain controlled amplifier up to 1 GHz ? Superior cross-modulation performance during AGC |
| 描述与应用 |
N沟道双栅MOS场效应管 VHF和UHF的应用3到7 V电源电压 诸如电视调谐器和专业的通信设备 ?专为使用5 V电源电压 ?高正向转移导纳 ?具有较高的正向传输的短沟道晶体管 准入输入电容比 ?低噪声增益控制放大器高达1 GHz ?高级交叉调制性能在AGC |
| 技术文档PDF下载 |
在线阅读  |
