BFP640 R4 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
13V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
10V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
40GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
110~270 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
200mW/0.2W |
| Description & Applications |
NPN Silicon Germanium RF Transistor* ? High gain low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz ? High maximum stable gain Gms= 24 dB at 1.8 GHz ? Gold metallization for extra high reliability ? 70 GHz fT-Silicon Germanium technology |
| 描述与应用 |
NPN硅锗射频晶体管 ?高增益低噪声RF晶体管 ?突出表现为广泛的无线应用 ?非常适于CDMA和WLAN应用 ?杰出的噪声指数为1.8GHz（F=0.65dB时） ?杰出的噪声指数为6 GHz（F =1.3dB时） ?高的最大稳定增益 ???GMS=24dB（1.8 GHz时） ?黄金金属额外的高可靠性 ?70 GHz的FT-硅锗技术 |
| 技术文档PDF下载 |
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