BFQ67W V2 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
8Ghz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
300mW/0.3W |
| Description & Applications |
NPN 8 GHz wideband transistor FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability ? SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is designed for wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz. |
| 描述与应用 |
NPN8 GHz的宽带晶体管 特点 ?高功率增益 ?低噪声系数 ?高转换频率 ?黄金金属确保卓越的可靠性 ?SOT323信封。 说明 NPN晶体管在一个塑料SOT323信封。它是专为宽带应用，如卫星电视调谐器和射频的便携式通信设备高达2 GHz。 |
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