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BSP225 BSP225 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
-250V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
最大漏极电流Id
Drain Current |
-0.225A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance |
10Ω @-200mA,-10V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
-0.8--2.8V |
耗散功率Pd
Power Dissipation |
1.5W |
Description & Applications |
FEATURES ? Very low RDS(on) ? Direct interface to C-MOS, TTL, ? High-speed switching ? No secondary breakdown |
描述与应用 |
?非常低的RDS(on) ?直接连接C-MOS,TTL, ?高速开关 ?无二次击穿 |
技术文档PDF下载 |
在线阅读 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
BSP206 |
|
NXP/PHILIPS |
00+ |
SOT-223 |
450 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
BSP225 |
BSP225 |
NXP/PHILIPS |
01+ |
SOT-223 |
54 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
BSP225 |
BSP225 |
NXP/PHILIPS |
05+ |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
BSP230 |
BSP230 |
NXP/PHILIPS |
07NOPB |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
BSP250 |
BSP250 |
NXP/PHILIPS |
0621+ROHS |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
BSP295 |
S591 |
SIEMENS |
05+ |
SOT-223 |
0 |
场效应管FET-其它Other |
查看 |
BSP296 |
BSP296 |
INFINEON |
05+ |
SOT-223/SC-73/TO261-4 |
1000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
BSP296 |
BSP296 |
INFINEON |
05+ |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
BSP297 |
BSP297 |
SIEMENS |
05+ |
SOT-223/SC-73/TO261-4 |
0 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
BSP295 |
BSP295 |
SIEMENS |
05+ |
SOT-223/SC-73/TO261-4 |
422 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
BSP220 |
BSP220 |
NXP/PHILIPS |
11+ROHS |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
BSP220 |
BSP220 |
NXP/PHILIPS |
11+ROHS |
SOT-223 |
0 |
场效应管FET |
查看 |
BSP250 |
BSP250 |
NXP/PHILIPS |
06+ROHS |
SOT-223 |
9000 |
场效应管FET |
查看 |
BSP230 |
BSP230 |
NXP/PHILIPS |
07+ROHS |
SOT-223 |
4000 |
场效应管FET |
查看 |
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