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BSP315P BSP315 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
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| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
| 最大漏极电流Id
Drain Current |
-1.17A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.5Ω @-1170mA,-10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1--2V |
| 耗散功率Pd
Power Dissipation |
1.8W |
| Description & Applications |
Features ? P-Channel ? Enhancement mode ? Avalanche rated ? Logic Level ? dv/dt rated |
| 描述与应用 |
?P沟道 ?增强模式 ?额定雪崩 ?逻辑电平 ?dv / dt的额定 |
| 技术文档PDF下载 |
在线阅读  |
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相关型号列表 |
| 型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
| BSP315P |
BSP315 |
INFINEON |
06+ |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| BSP316 |
BSP316 |
SIEMENS |
05+ |
SOT-223 |
470 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| BSP316S |
BSP316S |
INFINEON |
05+ |
SOT-223 |
0 |
场效应管FET-MOSFET-P沟道MOSFET P-Channel |
查看 |
| BSP318S |
BSP318 |
INFINEON |
09+ |
SOT-223/SC-73/TO261-4 |
26150 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| BSP318S |
BSP318 |
INFINEON |
09+ |
SOT-223/SC-73/TO261-4 |
1000 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
| BSP31 |
BSP31 |
NXP/PHILIPS |
03NOPB |
SOT-223/TO-261AA |
1700 |
三极管Bipolar Junction Transistors(BJT)-PNP |
查看 |
| BSP318S |
BSP318 |
INFINEON |
05+ |
SOT-223/SC-73/TO261-4 |
200 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
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