CBCX68TR CBCX68 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
20V |
| 集电极连续输出电流IC
Collector Current(IC) |
1A |
| 截止频率fT
Transtion Frequency(fT) |
65MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
85~375 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
1.2W |
| Description & Applications |
SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS The CENTRAL SEMICONDUCTOR CBCX68 silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability. complementary types CBCX69 |
| 描述与应用 |
硅互补 小信号晶体管 该中央半导体CBCX68的硅晶体管由外延平面工艺制造，环氧树脂模压在一个表面贴装封装，专为需要高电流能力的应用。 互补类型CBCX69 |
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