CMPTA14 C1N 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-EmitterVoltage(VCEO) |
30V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
| 截止频率fT
Transtion Frequency(fT) |
125MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
20000 @ 5V,0.1A |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
1.5V |
| 耗散功率Pc
Power Dissipation |
350mW/0.35W |
| Description & Applications |
? The CENTRAL SEMICONDUCTOR CMPTA13, ? CMPTA63 series types are complementary ? silicon darlington transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. |
| 描述与应用 |
?中央SEMICONDUCTOR CMPTA13。 ?CMPTA63系列类型是互补的 ?硅达林顿晶体管由外延平面工艺制造，环氧树脂模压在一个表面贴装封装，设计要求非常高增益的应用。 |
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