CMPTA42 C1D 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
300V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
300V |
| 集电极连续输出电流IC
Collector Current(IC) |
500mA/0.5A |
| 截止频率fT
Transtion Frequency(fT) |
50MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
40 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率Pc
Power Dissipation |
350mW/0.35W |
| Description & Applications |
SILICON COMPLEMENTARY HIGH VOLTAGE TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA42 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. complementary types CMPTA92 |
| 描述与应用 |
硅互补 高压晶体管 该中央半导体CMPTA42的类型是一个表面贴装环氧树脂成型硅平面外延晶体管为极高电压应用设计。 互补类型CMPTA92 |
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