DTA113ZE E11 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
1KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
10 |
| 直流电流增益hFE
DC Current Gain(hFE) |
|
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
0.15W/150mW |
| Description & Applications |
Feature ?Digital transistor (built-in resistor) ?The built-in bias resistor allows the configuration of an inverter circuit without connecting any external input resistors (see Equivalent circuit). ?Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be positively biased. The insulation also eliminates most of the parastic effects. ?Circuit design is simplified since only the OFF and the ON conditions have to be set. |
| 描述与应用 |
特点 ?数字晶体管（内置电阻） ?内置的偏置电阻器允许配置的逆变器电路无需连接任何外部输入电阻（见等效电路）。 ?每个偏置电阻薄膜电阻。由于它们是完全绝缘的，输入可以是正失之偏颇。的绝缘也消除了大部分的寄生效应。 ?电路设计简化，因为只有OFF和ON条件都必须设置。 |
| 技术文档PDF下载 |
在线阅读  |
