DTA114EET1G 6A 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
10KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
60 |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
Feature ?Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network ?Simplifies Circuit Design ?Reduces Board Space ?Reduces Component Count ?The SC?75/SOT?416 package can be soldered using wave or reflow.The modified gull?winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ?Pb?Free Packages are Available |
| 描述与应用 |
特点 ?偏置电阻晶体管PNP硅表面贴装晶体管与单片偏置电阻网络 ?简化电路设计 ?缩小板级空间 ?减少元件数量 ?SC-75/SOT-416包装可以使用波或回流焊接。修改后的鸥翅引线过程中吸收热应力 除焊接的模具损坏的可能性。 ?无铅包可用 |
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