FC101 101 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-55V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-150mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
180MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
160~600 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-110mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP Epitaxial Planar Silicon composite Transistors ? low-frequency general purpose amp. ? composite type with 2 transistors contained in the CP package currently in use,improving the mounting efficiency greatly ? the FC101 is formed with two chips,being equivalent to the 2SA1622,placed in one package |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP平面外延硅复合晶体管 ?低频通用放大器。 ?复合型2个晶体管，在CP包装目前在使用，大大提高了安装效率 ?FC101两个芯片组成，相当于2SA1622，放置在一个包装 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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