FC117 117 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-15V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
400MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
160~560 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-15mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? PNP Epitaxial Planar Silicon Composite Transistor ? Low-Frequency General-Purpose Amp Applications ? Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. ? The FC117 is formed with two chips, being equivalent to the 2SA1753, placed in one package. ? Low collector to emitter saturation voltage. ? Excellent in thermal equilibrium and pair capability |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP外延平面硅复合晶体管 ?低频通用放大器应用 ?复合型中包含2个晶体管CP包装目前在使用，大大提高了安装效率。 ?FC117两个芯片组成，相当于2SA1753放置在一个包装。 ?低集电极到发射极饱和电压。 ?优秀的热平衡和对能力 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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