FC22H 22H 的参数 |
| FET类型
Type |
JFET N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
15V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-15V |
| 最大漏极电流Id
Drain Current |
50mA |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
|
| 跨导
Forward Transfer Admittance |
33ms@VDS=5V，VGS=0V，f=1kHz |
| IDSS(Vgs=0V) |
16mA~32mA |
| 开启电压Vgs（th）/关断电压Vgs（off）
Gate-Source Threshold/Cut-off Voltage |
-0.3V~-1.5V |
| BJT 类型
Type |
NPN |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
55V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
200MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
135~400 |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Applications ? Composite type with an J-FET transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly. ? The FC22 is formed with two chips, one being equivalent to the 2SC4639 and the other the 2SK3266, placed in one package. ? Drain and emitter are shared. |
| 描述与应用 |
TR：NPN平面外延硅晶体管 场效应管：N-沟道结硅FET 高频放大器，AM应用 ?复合型与J-FET晶体管和一个PNP晶体管，包含在传统的CP包装，大大提高了安装效率。 FC22形成有两个芯片，一个相当于2SC46392SK3266，放置在一个包装。 ?汲极和发射极是共用的。 |
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