FDC6306P 306 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-8V |
| 最大漏极电流Id
Drain Current |
-1.9A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
250m?@ VGS = -2.5V, ID = -1.7A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.4~-1.5V |
| 耗散功率Pd
Power Dissipation |
960mW/0.96W |
| Description & Applications |
Dual P-Channel 2.5V Specified Power Trench MOSFET General Description These P-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications ? Load switch ? DC/DC converter ? Motor driving Features ? Low gate charge (3.5nC typical). ? Fast switching speed. ? High performance trench technology for extremely low RDS(ON) ? SuperSOTTM-6 package: small footprint |
| 描述与应用 |
双P沟道2.5V额定功率沟道MOSFET 概述 这些P沟道低阈值2.5V指定的MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，但维持出色的开关性能低栅极电荷。 应用 ?负荷开关 ?DC/ DC转换器 ?电机驱动 特点 ?低栅极电荷（3.5nC典型值）。 ?快速开关速度。 ?高性能沟道技术极低的RDS（ON） ?SuperSOTTM-6包装：占地面积小 |
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