FDD6692 FDD6692 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
16V |
| 最大漏极电流Id
Drain Current |
5.4A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.012Ω/Ohm @1.4A,10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1-3V |
| 耗散功率Pd
Power Dissipation |
5.7W |
| Description & Applications |
30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features ? 54 A, 30 V. RDS(ON) = 12 m? @ VGS = 10 V RDS(ON) = 14.5 m? @ VGS = 4.5 V ? Low gate charge (18 nC typical) ? Fast switching ? High performance trench technology for extremely low RDS(ON) |
| 描述与应用 |
30V N-沟道PowerTrench MOSFET 概述 此N沟道MOSFET已专门设计以提高整体效率的DC / DC 转换器采用同步或传统开关PWM控制器。它已被优化低栅极电荷，低RDS（ON）和快速开关速度。 ?54 A，30 V的RDS（ON）=12MΩ@ VGS= 10 V RDS（ON）= 14.5MΩ@ VGS= 4.5 V ?低栅极电荷（18 nC典型） ?快速开关 ?高性能沟道技术极 低RDS（ON） |
| 技术文档PDF下载 |
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