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FDD8896 8896 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
20V |
最大漏极电流Id
Drain Current |
9.4A |
源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
0.0057Ω/Ohm @3.5A,10V |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
1.2-2.5V |
耗散功率Pd
Power Dissipation |
80W |
Description & Applications |
N-Channel PowerTrench ?MOSFET 30V, 94A, 5.7m? General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Features ? rDS(ON) = 5.7mW, VGS = 10V, ID = 35A ? rDS(ON)= 6.8mW, VGS = 4.5V, ID = 35A ? High performance trench technology for extremely low DS(ON) ? Low gate charge ? High power and current handling capability |
描述与应用 |
N-沟道PowerTrench?MOSFET 30V,94A,5.7mΩ 概述 这N沟道MOSFET已专门设计 提高整体效率的DC / DC转换器 同步或传统开关PWM 控制器。它已被优化的低门电荷,低 RDS(ON)和快速开关速度。 ?高性能沟道技术极低 DS(ON) ?低栅极电荷 ?高功率和电流处理能力 |
技术文档PDF下载 |
在线阅读 |
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相关型号列表 |
型号 |
标记/丝印/代码 |
厂家 |
批号 |
封装 |
数量 |
描述 |
详细资料 |
FDD2570 |
2570 |
FAIRCHILD |
05+ |
TO-252/D-PAK |
45 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD6030L |
FDD6030L |
FAIRCHILD |
05+ |
TO-252/D-PAK |
1200 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD6035AL-NL |
FDD6035AL |
FAIRCHILD |
05NOPB |
TO-252/D-PAK |
44990 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD6644 |
FDD6644 |
FAIRCHILD |
05+ |
TO-252/D-PAK |
2650 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD6670A |
FDD6670A |
FAIRCHILD |
04+ |
TO-252/D-PAK |
350 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD6692 |
FDD6692 |
FAIRCHILD |
05+ |
TO-252/D-PAK |
3500 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD8878 |
FDD8878 |
FAIRCHILD |
05+ |
TO-252/D-PAK |
1800 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD8896 |
8896 |
FAIRCHILD |
05+ |
TO-252/D-PAK |
1600 |
场效应管FET-MOSFET-N沟道MOSFET N-Channel |
查看 |
FDD6035AL-NL |
FDD6035AL |
FAIRCHILD |
05+rohs |
TO-252/D-PAK |
0 |
场效应管FET |
查看 |
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