FDS6609A FDS6609A 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-20V |
| 最大漏极电流Id
Drain Current |
-6.3A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
50m?@ VGS = -4.5V, ID = -5.5A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-1~-3V |
| 耗散功率Pd
Power Dissipation |
2.5W |
| Description & Applications |
P-Channel Logic Level Power Trench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications · DC/DC converter · Load switch · Motor Drive Features · Low gate charge · Fast switching speed · High performance trench technology for extremely low RDS(ON) · High power and current handling capability |
| 描述与应用 |
P沟道逻辑电平功率沟槽MOSFET 概述 这个P-沟道逻辑电平MOSFET采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的低线的功率损耗和快速开关是必需的。 应用 ·DC/ DC转换器 ·负荷开关 ·马达驱动器 特点 ·低栅极电荷 ·快速开关速度 ·高性能沟槽技术非常低的RDS（ON） ·高功率和电流处理能力 |
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