FMS1 S1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-150mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
140MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
120~560 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-500mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? Emitter common (dual transistors) ? Two 2SA1037AK chips in a UMT or SMT package. ? Mounting cost and area can be cut in half |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?发射极普通的（双晶体管） ?两个2SA1037AK在城市轨道交通或SMT封装的芯片。 ?安装成本和面积可减少一半 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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