FN4F4M NB1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
22KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
22KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
60~195 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
FEATURES ? RESISTOR BUILT-IN TYPE PNP TRANSISTOR ? Compact package ? Resistors built-in type ? Complementary to FA4F4M |
| 描述与应用 |
特点 ?电阻内置型PNP晶体管 ?小型封装 ?内置式电阻器 ?互补FA4F4M的 |
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