FP107 107 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-15V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-11V |
| 集电极连续输出电流IC
Collector Current(IC) |
-600mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
400MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
140~560 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-220mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
1300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ?PNP Epitaxial Planar Silicon Transistor ?Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. ?The FP107 is composed of 2 chips, one being equivalent to the 2SB1396 and the other the SBS001 ?DC-DC Converter Applications |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?PNP外延平面硅晶体管 ?PNP晶体管和肖特基势垒二极管在一个包中，便于高密度安装的复杂类型。 ?FP107 2芯片组成，其中之一是相当于2SB1396情况SBS001的 ?DC-DC转换器应用 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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