FP1A3M S32 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-25V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
1KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
1KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
100 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.2W/200mW |
| Description & Applications |
FEATURES ? COMPOUND TRANSISTOR ? on-chip resistor PNP silicon epitaxial transistor For mid-speed switching ? Up to 0.7 A current drive available ? On-chip bias resistor ? Low power consumption during drive |
| 描述与应用 |
特点 ?复合晶体管 ?片上电阻PNP硅外延晶体管中速开关 ?高达0.7 A的电流驱动器可用 ?片上偏置电阻 ?低功耗，在驱动器 |
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