FP202-TL 202 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA/500mA |
| 截止频率fT
Transtion Frequency(fT) |
250MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
140~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
-100mV/70mV |
| 耗散功率Pc
Power Dissipation |
1000mW |
| Description & Applications |
Features ? PNP/NPN Epitaxial Planar Silicon Transistor ? Push-Pull Circuit Applications ? Composite type with 2 transistors (PNP and NPN) contained in one package facilitating high-density mounting. ? The FP202 is formed with a chip being equivalent to the 2SA1338 and a chip being equivalent to the 2SC3392, placed in one package. |
| 描述与应用 |
特点 ?PNP/ NPN平面外延硅晶体管推挽电路应用 ?复合型2个晶体管（PNP和NPN） ?包含在一个包装促进高密度安装。 ?FP202相当于一个芯片上形成有2SA1338和芯片等效于的2SC3392，放置在一个包装。 |
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