FP303 303 的参数 |
三极管BJT类型
TYPE |
NPN |
三极管BJT集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
三极管BJT集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
三极管BJT集电极连续输出电流IC
Collector Current(IC) |
2A |
三极管BJT截止频率fT
Transtion Frequency(fT) |
150MHz |
三极管BJT直流电流增益hFE
DC Current Gain(hFE) |
100mA |
三极管BJT管压降VCE(sat)
Collector-Emitter Saturation Voltage |
0.15~0.4V |
二极管DIODE类型
TYPE |
肖特基-单管 SBD-Single |
二极管DIODE反向电压VR
Reverse Voltage |
50V |
二极管DIODE正向整流电流Io
Rectified Current |
500mA |
二极管DIODE正向电压降VF
Forward Voltage(Vf) |
550mV |
耗散功率Pc
Power Dissipation |
800mW |
Description & Applications |
Features ? NPN Epitaxial Planar Silicon Transistor ? Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting. ? The FP303 is composed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in onepackage. ? DC-DC Converter Applications |
描述与应用 |
特点 ?NPN平面外延硅晶体管 ?复合型NPN晶体管和Schottoky的垒二极管促进高密度安装。 ?FP303由等效于芯片2SD1623和SB05-05CP,它被放置在一个包。 ?DC-DC转换器应用 |
技术文档PDF下载 |
在线阅读 |