FSB660A 660A 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?60V |
| 集电极连续输出电流IC
Collector Current(IC) |
-2A |
| 截止频率fT
Transtion Frequency(fT) |
75MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
250~550 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-300mV/-0.3V |
| 耗散功率Pc
PoWer Dissipation |
500mW/0.5W |
| Description & Applications |
PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. |
| 描述与应用 |
低饱和PNP晶体管 这些设备的设计与高电流增益和低饱和电压与集电极电流高达2A的连续。 |
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