FZT949TA FZT949 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
?30V |
| 集电极连续输出电流IC
Collector Current(IC) |
-6A |
| 截止频率fT
Transtion Frequency(fT) |
100MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
100~300 |
| 管压降VCE（sat）
Collector-Emitter SaturationVoltage |
-440mV/-0.44V |
| 耗散功率Pc
PoWer Dissipation |
3W |
| Description & Applications |
PNP SILICON PLANAR HIGH CURRENT TRANSISTORS FEATURES Extremely low equivalent on-resistance 6 Amps continuous current Up to 20 Amps peak current Very low saturation voltage Excellent hFE characteristics specified upto 20 Amps |
| 描述与应用 |
PNP硅平面高电流晶体管 特点 极低的等效导通电阻 6安培连续电流 高达20安培的峰值电流 非常低的饱和电压 优秀HFE特性高达20安培 |
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