HMBT1815GLT1 C4G 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
250mV/0.25V |
| 耗散功率Pc
Power Dissipation |
225mW/0.225W |
| Description & Applications |
NPN EPITAXIAL PLANAR TRANSISTOR The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification. |
| 描述与应用 |
NPN外延平面晶体管 专为通用开关和放大器应用。 |
| 技术文档PDF下载 |
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