HN1C01FE-Y C1Y 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/0.15A |
| 截止频率fT
Transtion Frequency(fT) |
80MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120~240 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
100mV/0.1V |
| 耗散功率Pc
Power Dissipation |
100mW/0.1W |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Small package (Dual type) .High voltage and high current : VCEO = 50V, IC = 150mA (max) .High hFE : hFE = 120~400 ? Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) . Audio Frequency General Purpose Amplifier Applications. |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延型（PCT工艺） 小型封装（双类型）.高电压和高电流：VCEO= 50V，IC=150mA（最小值） .高HFE：HFE=120?400 ?优异的线性度：（IC=0.1毫安）/ HFE（IC=2毫安）=0.95（典型值）.音频通用放大器应用. |
| 技术文档PDF下载 |
 在线阅读(1) (2) |
