HN1K05FU KK 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
最大漏极电流Id
Drain Current |
100mA/0.1A |
源漏极导通电阻Rds
Drain-Source On-State Resistance |
50?@ VGS = 1.2V, ID =1mA |
开启电压Vgs(th)
Gate-Source Threshold Voltage |
0.5~1V |
耗散功率Pd
Power Dissipation |
200mW/0.2W |
Description & Applications |
For Portable Devices High Speed Switching Applications Interface Applications ? High input impedance and extremely low drive current ? Vth is low and it is possible to drive directly at low-voltage CMOS ? Suitable for high-density mounting because of a compact package |
描述与应用 |
用于便携式设备 高速开关应用 接口应用 ?高输入阻抗和极低的驱动电流 ?Vth是低,并有可能在低电压CMOS直接驱动 ?适用于高密度安装,因为一个紧凑的封装 |
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