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HN1L02FU
 型号:  HN1L02FU
 标记/丝印/代码/打字:  K2
 厂家:  TOSHIBA
 封装:  SOT-363/SC70-6/UF6
 批号:  05+ROHS1694
 库存数量:  4064
 所属分类:  场效应管FET
  复合场效应管Complex FET
    MOSFET N沟道+P沟道MOSFET N-Channel and P-Channel
 技术文档PDF:  在线阅读
   
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HN1L02FU K2 的参数

最大源漏极电压Vds Drain-Source Voltage 20V/-20V
最大栅源极电压Vgs(±) Gate-Source Voltage 10V/7V
最大漏极电流Id Drain Current 50mA/-50mA
源漏极导通电阻Rds Drain-Source On-State Resistance 40m?@ VGS =2.5V, ID =10mA/40m?@ VGS =-2.5V, ID =-10mA
开启电压Vgs(th) Gate-Source Threshold Voltage 0.5~1.5V/-0.5~-1.5V
耗散功率Pd Power Dissipation 200mW/0.2W
Description & Applications High Speed Switching Applications Analog Switch Applications 2.5V gate drive Low threshold voltage High speed Small package
描述与应用 高速开关应用 模拟开关应用 2.5V栅极驱动器 低阈值电压 高速 小型封装
技术文档PDF下载 在线阅读

 

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