HN7G02FU FT 的参数 |
| FET类型
Type |
MOSFET N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V |
| 最大漏极电流Id
Drain Current |
50mA |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
20?@ VGS = 2.5V, ID =10mA |
| 跨导
Forward Transfer Admittance |
20ms@VDS=6V，Id=10mA |
| IDSS(Vgs=0V) |
|
| 开启电压Vgs（th）/关断电压Vgs（off）
Gate-Source Threshold/Cut-off Voltage |
0.5V~1.5V |
| BJT 类型
Type |
PNP |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/0.1A |
| 截止频率fT
Transtion Frequency(fT) |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
120~400 |
| 耗散功率Pd
Power Dissipation |
200mW/0.2W |
| Description & Applications |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. |
| 描述与应用 |
多芯片分立器件 电源管理开关应用， 逆变器电路中的应用，驱动电路中的应用和接口电路中的应用。 |
| 技术文档PDF下载 |
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