HN9C01FT WX 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
8V/12V |
| 集电极连续输出电流IC
Collector Current(IC) |
15mA/80mA |
| 截止频率fT
Transtion Frequency(fT) |
10000MHz/7000MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~160/80~240 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
200mW |
| Description & Applications |
Features ? TOSHIBA Transistor Silicon NPN Epitaxial Type ? Two devices are built in to the super-thin and ultra super mini(6 pins) package :ES6 |
| 描述与应用 |
特点 ?东芝晶体管的硅NPN外延型 ?两个设备都建在超薄和超超级迷你（6针）封装：ES6 |
| 技术文档PDF下载 |
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