HQ1A3M DQ 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-20V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-20V |
| 集电极连续输出电流IC
Collector Current(IC) |
-200mA/0.2A |
| 基极输入电阻R1
Input Resistance(R1) |
1KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
1KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
1 |
| 直流电流增益hFE
DC Current Gain(hFE) |
100 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
2.0W |
| Description & Applications |
FEATURES ?COMPOUND TRANSISTOR ?on-chip resistor PNP silicon epitaxial transistor For mid-speed switching ?Up to 2A high current drives such as ICs, motors, and solenoids available ?On-chip bias resistor ?Low power consumption during drive |
| 描述与应用 |
特点 ?复合晶体管 ?片上电阻晶体管PNP硅外延中速切换 ?高达2A大电流驱动器，如集成电路，电动机和螺线管 ?片上偏置电阻 ?低功耗，在驱动器 |
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