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HR1A4M
 型号:  HR1A4M
 标记/丝印/代码/打字:  MS
 厂家:  NEC
 封装:  SOT-89/SC-62
 批号:  05+
 库存数量:  4300
 所属分类:  三极管Bipolar Junction Transistors(BJT)
  带阻尼PNPPNP Bipolar Digital Transistor (BRT)
 技术文档PDF:  在线阅读
   
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HR1A4M MS 的参数

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) -60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) -60V
集电极连续输出电流IC Collector Current(IC) -100mA/-0.1A
基极输入电阻R1 Input Resistance(R1) 10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 100
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation 2.0W
Description & Applications FEATURES ?COMPOUND TRANSISTOR ?on-chip resistor PNP silicon epitaxial transistor For mid-speed switching ?Up to 2A high current drives such as ICs, motors, and solenoids available ?On-chip bias resistor ?Low power consumption during drive
描述与应用 特点 ?复合晶体管 ?片上电阻晶体管PNP硅外延中速切换 ?高达2A大电流驱动器,如集成电路,电动机和螺线管 ?片上偏置电阻 ?低功耗,在驱动器
技术文档PDF下载 在线阅读

 

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