HSMS-2860-TR1 TO 的参数 |
| 反向电压Vr
Reverse Voltage |
|
| 平均整流电流Io
AVerage Rectified Current |
1mA |
| 最大正向压降VF
Forward Voltage(Vf) |
350mV/0.35V |
| 最大耗散功率Pd
Power dissipation |
|
| Description & Applications |
Surface Mount microwave Schottky Detector Diodes Avago’s HSMS?286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. ? High Detection Sensitivity: up to 50 mV/μW at 915 MHz up to 35 mV/μW at 2.45 GHz up to 25 mV/μW at 5.80 GHz ? Low FIT (Failure in Time) Rate* ? HSMS-286K Grounded Center Leads Provide up to 10 dB Higher Isolation ? Matched Diodes for Consistent Performance ? Better Thermal Conductivity for Higher Power Dissipation ?Surface Mount Microwave Schottky Detector Diodes |
| 描述与应用 |
表面贴装微波肖特基检波二极管 Avago Technologies（安华高科技）的直流偏置检波二极管HSMS-286x系列的设计和优化，从915 MHz到5.8 GHz。他们是理想的RF/ ID和射频标签的应用，以及大信号检测，调制，射频到直流转换或电压倍增。 ?检测灵敏度高：到50 mV/μW在915 MHz 高达35毫伏/μW在2.45GHz 高达25毫伏/μW在5.80 GHz ?低FIT（故障时间）率* ?HSMS-286K接地中心信息提供多达高出10 dB的隔离 ?一致的性能匹配二极管 ?更好的导热性更高的功率耗散 ?表面贴装微波肖特基检波二极管 |
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