IMT17 T17 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-500mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
200MHz |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
120~390 |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
-600mV |
| Q2基极输入电阻R1
Input Resistance(R1) |
300mW |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
Features ? General Purpose Transistor (Isolated Dual Transistors) ? Two 2SA1036K chips in an SMT package. ? Same size as SMT3 package, so same mounting machine can be used for both. ? Transistor elements are independent, eliminating interference. ? High collector current. IC = –500mA ? Mounting cost, and area, are reduced by one half. |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
特点 ?通用晶体管（隔离双晶体管） ?两个2SA1036K芯片在SMT封装。 ?SMT3封装尺寸相同，所以相同的安装机器可以同时用于。 ?晶体管元素是独立的，消除干扰。 ?高集电极电流。 IC=-500毫安的 ?安装成本和面积，减少了一半。 |
| 直流电流增益hFE
DC Current Gain(hFE) |
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| 截止频率fT
Transtion Frequency(fT) |
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| 耗散功率Pc
Power Dissipation |
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| Description & Applications |
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| 描述与应用 |
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| 技术文档PDF下载 |
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