IMX17 X17 的参数 |
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
集电极连续输出电流IC
Collector Current(IC) |
500mA |
截止频率fT
Transtion Frequency(fT) |
250MHz |
直流电流增益hFE
DC Current Gain(hFE) |
120~390 |
管压降VCE(sat)
Collector-Emitter Saturation Voltage |
600mV |
耗散功率Pc
Power Dissipation |
300mW |
Description & Applications |
Features ? General purpose transistors(dual transistors) ? Two 2SD1484K chips in an SMT package. ? Mounting possible with SMT3 automatic mounting machine. ? Transistor elements are independent, eliminating interference. ? High collector current. IC = 500mA ? Mounting cost and area can be cut in half. |
描述与应用 |
特点 ?通用晶体管(双晶体管) ?两个2SD1484K在SMT封装的芯片。 ?安装可能与SMT3可能自动装配机。 ?晶体管元素是独立的,消除干扰。 ?高集电极电流。 IC=500毫安 ?安装成本和面积可减少一半 |
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