IMZ1 Z1 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
60V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
150mA/-150mA |
| 截止频率fT
Transtion Frequency(fT) |
180MHz/140MHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
120~560 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/-500mV |
| 耗散功率Pc
Power Dissipation |
300mW |
| Description & Applications |
Features ?General purpose transistor( dual transistors) ?Both a 2SA1037AK chip and 2SC241ZK chip in a UMT or SMT package. ?Mounting possible with UMT3 or SMT3 automatic mounting machine. ?Transistor elements are independent, eliminating interference. ?Mounting cost and area can be cut in half. |
| 描述与应用 |
特点 ?通用晶体管（双晶体管） ?一个2SA1037AK的芯片和2SC241ZK芯片UMT或SMT封装。 ?安装可能与UMT3或SMT3自动的安装机。 ?晶体管元素是独立的，消除干扰。 ?安装成本和面积可减少一半 |
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