IRFR9010TR FR9010 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-60V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
±20V |
| 最大漏极电流Id
Drain Current |
-5.3A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.5Ω @-2.7A,-10V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-2.0--4.0V |
| 耗散功率Pd
Power Dissipation |
25W |
| Description & Applications |
P-CHANNEL POWER MOSFETS Lower Rds Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability |
| 描述与应用 |
P沟道功率MOSFET 较低RDS 改进感性耐用 快速开关时间 细胞结构坚固的多晶硅栅 较低的输入电容 扩展安全工作区 改进高温可靠性 |
| 技术文档PDF下载 |
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