MCH5809 QJ 的参数 |
| MOSFET 类型
Type |
N沟道 N-Channel |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
12V |
| 最大漏极电流Id
Drain Current |
1.5A |
| 源漏极导通电阻Rds(on)
Drain-Source On-State Resistance |
215m?@ VGS =4V, ID =800mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V |
| DIODE 类型
Type |
肖特基二极管SBD Schottky Barrier Diodes |
| 反向电压Vr
Reverse Voltage |
30V |
| 平均整流电流Io
Average Rectified Current |
500mA/0.5A |
| 最大正向压降VF
Forward Voltage(Vf) |
0.35V@IF=300mA |
| 耗散功率Pd
Power Dissipation |
800mW/0.8W |
| Description & Applications |
DC / DC Converter Applications Features ? Composite type with an N-Channel Sillicon MOSFET (MCH3443) and a Schottky Barrier Diode (SBS006M) contained in one package facilitating high-density mounting. [MOSFET] ? Low ON-resistance. ? Ultrahigh-speed switching. ? 2.5V drive. [SBD] ? Short reverse recovery time. ? Low forward voltage. |
| 描述与应用 |
DC/ DC转换器应用 特点 ?复合型与N-通道硅MOSFET（MCH3443）一个肖特基二极管（SBS006M），包含在一个包装促进高密度安装的。 [MOSFET] ?低导通电阻。 ?超高速开关。 ?2.5V驱动。 [SBD] ?反向恢复时间短。 ?低正向电压。 |
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