MCH6613 FM 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V/-30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
10V/10V |
| 最大漏极电流Id
Drain Current |
350mA/-200mA |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
12.8?@ VGS =1.5V, ID =10mA/54?@ VGS =-1.5V, ID =-1mA |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.4~1.3V/-0.4~-1.4V |
| 耗散功率Pd
Power Dissipation |
800mW/0.8W |
| Description & Applications |
Ultrahigh-Speed Switching Applications Features ? The MCH6613 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. ? Excellent ON-resistance characteristic. ? 2.5V drive. |
| 描述与应用 |
超高速开关应用 特点 ?MCH6613采用N沟道MOSFET和一个P沟道MOSFET，具有低导通电阻和高速开关，从而实现高密度安装。 ?优秀的导通电阻特性。 ?2.5V驱动。 |
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