MGF4917C CH 的参数 |
最大源漏极电压Vds
Drain-Source Voltage |
-3V |
栅源极击穿电压V(BR)GS
Gate-Source Voltage |
-3V |
漏极电流(Vgs=0V)IDSS
Drain Current |
10mA-60mA |
关断电压Vgs(off)
Gate-Source Cut-off Voltage |
-0.1V -- -1.5V |
耗散功率Pd
Power Dissipation |
50mW |
Description & Applications |
Type carrier super low noise GaAs FET X to K band low noise amplifiers and oscillators Low noise figure High associated gain |
描述与应用 |
超低噪音型载体砷化镓 场效应管 X到K波段低噪声放大器和振荡器 低噪声系数 高相关增益 |
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