MMBR5179LT1 7H 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
50mA |
| 截止频率fT
Transtion Frequency(fT) |
1.4GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
30~250 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
400mV/0.4V |
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. ? High Gain — Gpe = 15 dB Typ @ f = 200 MHz ? Low Noise — NF = 4.5 dB Typ @ f = 200 MHz ? Available in tape and reel packaging options: T1 suffix = 3,000 units per reel |
| 描述与应用 |
RF线NPN硅 高频三极管 专为小信号放大到500 MHz的频率。 具体使用厚薄膜电路，采用表面贴装封装 组件。 ?高增益 - GPE=15 dB（典型值）@ F =200兆赫 ?低噪声 - NF= 4.5 dB（典型值）@ F =200兆赫 ?可在磁带和卷轴包装选择： T1后缀=3000单位每卷 |
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