MMBR901LT1 7A 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
25V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流IC
Collector Current(IC) |
30mA |
| 截止频率fT
Transtion Frequency(fT) |
38GHz |
| 直流电流增益hFE
DC Current Gain(hFE) |
50~200 |
| 管压降VCE（sat）
Collector-Emitter Saturation Voltage |
|
| 耗散功率Pc
Power Dissipation |
|
| Description & Applications |
The RF Line NPN Silicon High-Frequency TRANSISTOR Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times |
| 描述与应用 |
RF线NPN硅 高频三极管 设计主要用于高增益，低噪声小信号放大器 高达2.5 GHz。也可用在需要快速切换 |
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