MTD20P03HDLT4 20P03HL 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
30V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
30V |
| 最大漏极电流Id
Drain Current |
-1.9A |
| 源漏极导通电阻Rds
Drain-Source On-State
Resistance |
0.09Ω @950mA,5V |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
1.0-2.0V |
| 耗散功率Pd
Power Dissipation |
7.5W |
| Description & Applications |
Features ? Avalanche Energy Specified ? Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode ? Diode is Characterized for Use in Bridge Circuits ? IDSS and VDS(on) Specified at Elevated Temperature ? Pb?Free Packages are Available |
| 描述与应用 |
?雪崩能量 ?源漏二极管恢复时间等同于离散 快恢复二极管 ?二极管的特性是桥电路中使用 ?IDSS和VDS（上） 指定高温 ?无铅包可用 |
| 技术文档PDF下载 |
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