MUN5115T1 6E 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/-0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
|
| 电阻比(R1/R2)
Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
250 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.31W/310mW |
| Description & Applications |
FEATURES ?bias resistor transistors ?PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network ?Simplifies Circuit Design ?Reduces Board Space ?Reduces Component Count ?The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ?Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel |
| 描述与应用 |
特点 ?偏置电阻晶体管 ?PNP硅表面贴装晶体管与单片偏置电阻网络 ?简化电路设计 ?缩小板级空间 ?减少元件数量SOT-23封装，可以使用波或回流焊接。该改性鸥翅引线在焊接热应力吸收消除电路小片损坏的可能性。 ?可在8 mm压纹带和卷轴。使用设备号到责令7 inch/3000的单位卷轴。替换“T1”与“T3”设备编号责令13 inch/10的000个单位卷轴 |
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