MUN5214T1 8D 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
50V |
| 集电极连续输出电流IC
Collector Current(IC) |
100mA/0.1A |
| 基极输入电阻R1
Input Resistance(R1) |
10KΩ/Ohm |
| 基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
47KΩ/Ohm |
| 电阻比(R1/R2)
Resistance Ratio |
0.212765957 |
| 直流电流增益hFE
DC Current Gain(hFE) |
80-140 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
0.3W/300mW |
| Description & Applications |
Features NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network ? Simplifies Circuit Design ? Reduces Board Space ? Reduces Component Count ? The SC?70/SOT?323 package can be soldered using wave or reflow. The modified gull?winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. ? Pb?Free Packages are Available |
| 描述与应用 |
特性 NPN硅表面贴装晶体管 具有单片偏置电阻网络 ?简化电路设计 ?缩小板级空间 ?减少元件数量 ?SC-70/SOT-323包装可以使用波或回流焊接。 修改后的鸥翅引线过程中吸收热应力 除焊接的模具损坏的可能性。 ?可于8 mm压纹带和卷轴。使用设备号编排7 inch/3000的单位卷轴。 ?无铅包可用 |
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