MUN5316DW1T1 16 的参数 |
| 集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) |
-50V/50V |
| 集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC
Collector Current(IC) |
-100mA/100mA |
| Q1基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| Q1基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
∞ |
| Q1电阻比(R1/R2)
Q1 Resistance Ratio |
|
| Q2基极输入电阻R1
Input Resistance(R1) |
4.7KΩ/Ohm |
| Q2基极-发射极输入电阻R2
Base-Emitter Resistance(R2) |
∞ |
| Q2电阻比(R1/R2)
Q2 Resistance Ratio |
|
| 直流电流增益hFE
DC Current Gain(hFE) |
350 |
| 截止频率fT
Transtion Frequency(fT) |
|
| 耗散功率Pc
Power Dissipation |
250mW/0.25W |
| Description & Applications |
Features ?Dual Bias Resistor Transistors ?NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network ?Simplifies Circuit Design ?Reduces Board Space ?Reduces Component Count ?Available in 8 mm, 7 inch/3000 Unit Tape and Reel ?These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 |
特点 ?双偏置电阻晶体管 ?NPN和PNP硅表面贴装晶体管与单片偏置电阻网络 ?简化电路设计 ?缩小板级空间 ?减少元件数 ?8毫米，7 inch/3000单位带和卷轴 ?这些器件是无铅，无卤/ BFR免费，并符合RoHS标准 |
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