NTGS3446T1 446 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
|
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
|
| 最大漏极电流Id
Drain Current |
2.5A |
| 源漏极导通电阻ΩRds
DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
90m?@ VGS =4.5V, ID =3.2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
0.6~1.2V |
| 耗散功率Pd
Power Dissipation |
500mW/0.5W |
| Description & Applications |
Power MOSFET Features ? Ultra Low RDS(on) ? Higher Efficiency Extending Battery Life ? Logic Level Gate Drive ? Diode Exhibits High Speed, Soft Recovery ? Avalanche Energy Specified ? IDSS Specified at Elevated Temperature Applications ? Power Management in Portable and Battery?Powered Products, i.e.:Cellular and Cordless Telephones, and PCMCIA Cards ? Lithium Ion Battery Applications ? Notebook PC |
| 描述与应用 |
功率MOSFET 特点 ?超低RDS（上） ?更高的效率延长电池寿命 ?逻辑电平栅极驱动器 ?二极管具有高速软恢复 ?雪崩能量 ?IDSS指定高温 应用 ?电源管理在便携式和电池供电产品，即：蜂窝，无绳电话，PCMCIA卡 ?锂离子电池的应用 ?笔记本电脑 |
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