115m?@ VGS =2.5V, ID =2.3A/240m?@ VGS =-2.5V, ID =-2.7A
开启电压Vgs（th）
Gate-Source Threshold Voltage
0.6~1.2V/-0.6~-1.2V
耗散功率Pd
Power Dissipation
1.1W
Description & Applications
Power MOSFET Features ? Complementary N?Channel and P?Channel MOSFET ? Small Size, 40% Smaller than TSOP?6 Package ? Leadless SMD Package Featuring Complementary Pair ? Chip FET Package Provides Great Thermal Characteristics Similar to Larger Packages ? Low RDS(on) in a ChipFET Package for High Efficiency Performance ? Low Profile (< 1.10 mm) Allows Placement in Extremely Thin Environments Such as Portable Electronics ? Pb?Free Package is Available Applications ? Load Switch Applications Requiring Level Shift ? DC?DC Conversion Circuits ? Drive Small Brushless DC Motors ? Designed for Power Management Applications in Portable, Battery Powered Products
