NTJD4152PT1 TKV 的参数 |
| 最大源漏极电压Vds
Drain-Source Voltage |
-20V |
| 最大栅源极电压Vgs(±)
Gate-Source Voltage |
-12V |
| 最大漏极电流Id
Drain Current |
-880mA/-0.88A |
| 源漏极导通电阻Rds
Drain-Source On-State Resistance |
1?@ VGS = -1.8V, ID = -0.2A |
| 开启电压Vgs（th）
Gate-Source Threshold Voltage |
-0.45V |
| 耗散功率Pd
Power Dissipation |
272mW/0.272W |
| Description & Applications |
Trench Small Signal MOSFET Features ? Leading Trench Technology for Low RDS(ON) Performance ? Small Footprint Package (SC70-6 Equivalent) ? ESD Protected Gate ? Pb-Free Package is Available Applications ? Load/Power Management ? Charging Circuits ? Load Switching ? Cell Phones, Computing, Digital Cameras, MP3s and PDAs |
| 描述与应用 |
海沟小信号MOSFET 特点 ?领先沟道技术低RDS（ON）性能 ?小型封装（SC70-6等效） ?ESD保护门 ?无铅包装是可用 应用 ?负载/功率管理 ?充电电路？ ?负载开关 ?手机，电脑，数码相机，MP3和掌上电脑 |
| 技术文档PDF下载 |
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